Figure 4 shows the transmission spectra of the transparent film measured before and after environmental testing. After the tests were carried out at 55°C and

95% moisture for 6 h (ISO 9211), the transmittance of the TAT multilayers decreased, whereas no attenuation of visible light was observed for the TAS multilayers. This shows that the SiO2 film acted as a very good moisture barrier material, thereby preventing transmittance losses in the system. The transmittance of the TAS film improved with decreasing reflectance, which is related to the high-reflection index of the TiO2 layer. The weathering resistance of the TAS film could be improved by using a protective SiO2 film as the uppermost layer. Figure 3 Transmittance spectra of DMD structures with different metal and dielectric layers. Figure 4 Transmittance values before and after environmental testing. Microstructure of the TAS Torin 2 concentration multilayers The transmission electron microscopy (TEM) image of the cross section of a TAS film on a glass substrate presented in Figure 5 confirms that each layer (TiO2, SiO2, and Ag) had a flat and smooth structure,

which suggests high conductivity at the Ag layer of the TAS film. The transparent conductive multilayers (TAS) fabricated by E-beam coating with IAD have lower resistance than those prepared without IAD [2]. This is due to the different morphologies

of the Ag layers. The film prepared Pifithrin-�� concentration without IAD exhibits an island structure, and the low contact between the Ag islands results in a higher resistivity. On the other hand, the Ag layer prepared by with IAD is smooth and has a low resistivity. The TAS film reported herein was prepared by E-beam coating with IAD and has a low resistivity (sheet resistivity of 6.5 Ω/sq for a 9.5-nm-thick Ag layer). The Ag layer in this material is flat and sufficiently smooth to make it attractive for use as a transparent film. The film thicknesses determined from the TEM images are consistent with those predicted by simulations carried out using the Macleod software. The 10-nm-thick Ag layer was 3-mercaptopyruvate sulfurtransferase a AZD7762 cell line continuous strip exhibiting a nanoscale crystalline structure. While the TiO2 films were also polycrystalline, the SiO2 films exhibited an amorphous structure. The EDS mapping images shown in Figure 6 suggest that no oxides are present in the Ag layer, although diffusion is possible. Figure 7 shows EDS line scans that confirm the results of EDS mapping. The formation of partial nanocrystals is also clearly visible. Figure 5 TEM image of the cross section of a TAS film. Figure 6 Cross-sectional STEM mapping of TAS multilayer structures deposited by E-beam evaporation with IAD. Figure 7 EDS line scans of TiO 2 /Ag/SiO 2 multilayer structures deposited by E-beam evaporation with IAD.