The chemisorbed oxygen impurities could be O2−, O−, O2 −, O2 2− and OH− ions as well [29, 30], so the binding energy
not only depends on the charge of oxygen species but also depends upon the crystallographic orientation of the bounded surface to which the oxygen atoms or molecules are bound [29], which points to the nonstoichiometric nature and presence of oxygen vacancies present in the film. Also, our synthesis method is a solution-based method, so these oxygen vacancies can easily be generated during growth process. From previous reports, it was believed that electrochemical migration of oxygen vacancies is the CDK inhibitor dominating factor in the resistive switching behaviour [31, 32]. So we can also expect that the oxygen-deficient nature of the film which contains oxygen vacancies initially will enhance the resistance switching nature of prepared 2% Ti@-ZnO film. Figure 5 XPS (a), Ti 2p and (b) O 1 s spectra of 2% Ti-doped ZnO film. In our recent study [33], the resistive switching characteristics
of pure ZnO were improved (on/off, approximately 7) with Co doping in ZnO. In the present report, with the addition of Ti in ZnO, the resistive switching characteristics were further improved with on/off ratio (>14) and data retention time of 2,000 seconds was achieved. selleck kinase inhibitor Conclusions Ti-doped ZnO thin films were prepared by a facile electrochemical deposition method. The SEM, XPS and EDS mapping indicates that Ti is homogenously doped in ZnO films. The Ti-doped ZnO film had a similar structure to that of the pure ZnO film and had a preferential orientation in the (002) direction. The prepared film exhibits excellent resistance switching behaviour Epacadostat mw with a HRS/LRS ratio of about 14 during endurance test, much better than pure ZnO. In addition, the dominant conduction mechanism of LRS and HRS were explained by trap-controlled space-charge-limited conduction. The present
work demonstrates that Ti doping can further enhance Chloroambucil switching characteristics of pure ZnO films and thus have the potential for next-generation non-volatile memory applications. Acknowledgments The authors would like to acknowledge the financial support from the Australian Research Council Projects of DP110102391, DP1096769, FT100100956 and DP0988687 in this work. Electronic supplementary material Additional file 1: Figures S1 to S3: Figure S1: EDS elemental spectrum of 2% Ti-doped ZnO (inset table represents atomic percentages). Figure S2: I-V curve of Au/ZnO/ITO (a) linear scale (b) semi logarithmic scale. Figure S3: Endurance performance of the pure ZnO. (DOCX 294 KB) References 1. Liu SQ, Wu NJ, Ignatiev A: Electric-pulse-induced reversible resistance change effect in magnetoresistive films. Appl Phys Lett 2000,76(19):2749–2751.CrossRef 2. Yang JJ, Pickett MD, Li X, Ohlberg DA, Stewart DR, Stanley Williams R: Memristive switching mechanism for metal/oxide/metal nanodevices. Nat Nano 2008,3(7):429–433.CrossRef 3.