In order to achieve high-quality InN film, effort has been made by researchers with different methods such as optimizing FRAX597 research buy growth temperature, controlling V/III ratio, introducing buffer layer, or employing pulsed atomic layer epitaxy technique [15, 16]. However, the crystalline quality of InN film is still far below a satisfactory level due to the existence of huge quantity of defects [16]. To elucidate the original difficulty in In film deposition, the formation kinetics of InN with N and In atoms on the In polar GaN surface has been systematically

studied by first-principles calculations [17], it was found that the pre-deposition of In VEGFR inhibitor bilayer on the surface could improve the In migration on the surface and the smoothness of In film. In this work, the epitaxy method of In bilayer controlling and penetrated nitridation

selleck products was employed for the InN film growth on GaN template. In order to determine critical trimethylindium (TMI) flow required for forming In bilayer, the pulse time of TMI supply was optimized. The results revealed that the film quality became better as the thickness of the top indium atomic layers was close to bilayer. Based on the In bilayer deposition, a moderate, stable, and slow nitridation process by NH3 flow also played the key role in growing better-quality InN film. X-ray diffraction (XRD) measurements confirmed the gradual relaxation of biaxial strain in InN epilayers during increment of the next smoothness. Methods Growth of samples InN films were grown on a 3-μm-thick GaN template with(0001) sapphire substrate by using metalorganic chemical vapor deposition (MOCVD) system with a Thomas Swan closely coupled showerhead (CCS) reactor. The trimethylgallium (TMG), trimethylindium (TMI), and ammonia (NH3) were used as the precursors for Ga, In, and N, respectively, and H2 and N2

were used as the carrier gasses. Prior to the GaN/AlGaN superlattice growth, thermal cleaning of the (0001)-oriented sapphire substrate was carried out under hydrogen ambient at 1,050°C for 10 min to remove native oxide from the surface. Then, an approximately 30-nm low-temperature GaN buffer layer (approximately 570°C) was grown followed by a approximately 3-μm high-quality GaN underlaying layer (approximately 1,090°C). During the stage of InN growth, the pressure was set to 450 torr at 550°C [18]. In order to accurately control the deposition of indium atomic multilayers and the following nitridation process, the pulse growth method was employed through switching and adjusting the pulsed supply time of TMI and ammonia flows, as shown in Figure 1. For samples A, B, C, and D, a constant TMI flow of 2.0 × 10−5 mol/min was used whereas a series of duration time of the pulsed TMI flow, 16, 8, 4, and 3 s, was applied, respectively. Then, they were followed by a 33-s pulse of NH3 flow for the nitridation process. The mole flow of ammonia was set to be 0.5 mol/min.