CrossRef 15. Yang JJ, Zhang MX, Strachan JP, Miao F, Pickett MD, Kelley RD, Medeiros-Ribeiro G, Williams RS: High Anlotinib order switching endurance in TaO x memristive devices. Appl Phys Lett 2010, 97:232102.CrossRef 16. Banerjee W, Maikap S, Lai CS, Chen YY, Tien TC, Lee HY, Chen WS, Chen FT, Kao MJ, Tsai MJ, Yang JR: Formation polarity buy Epoxomicin dependent improved resistive switching memory characteristics using nanoscale (1.3 nm) core-shell IrO x nano-dots. Nanoscale Res Lett 2012, 7:194.CrossRef 17. Banerjee W, Maikap S, Rahaman SZ, Prakash A, Tien TC, Li WC, Yang JR: Improved resistive switching memory characteristics using core-shell IrO x nano-dots in
Al 2 O 3 /WO x bilayer structure. J Electrochem Soc 2012, 159:H177.CrossRef 18. Wu Y, Yu S, Lee B, Wong P: Low-power TiN/Al 2 O 3 /Pt resistive switching device with sub-20 μA switching current and gradual resistance modulation. J Appl Phys 2011, 110:094104.CrossRef 19. Fang RC, Sun QQ, Zhou P, Yang W, Wang PF, Zhang DW: High-performance bilayer flexible resistive random access memory based on low-temperature thermal atomic layer deposition. Nanoscale Res Lett 2013, 8:92.CrossRef 20. Jana D, Maikap S, Tien TC, Lee HY, Chen WS, Chen Caspase Inhibitor VI solubility dmso FT, Kao MJ, Tsai MJ: Formation-polarity-dependent improved resistive switching memory performance using IrO x /GdO x /WO x /W structure. Jpn J Appl
Phys 2012, 51:04DD17.CrossRef 21. Yang L, Kuegeler C, Szot K, Ruediger A, Waser R: The influence of copper top electrodes on
the resistive switching effect in TiO 2 thin films studied by conductive atomic force microscopy. Appl Phys Lett 2009, 95:013109.CrossRef 22. Yang JJ, Pickett MD, Li X, Ohlberg DAA, Stewart DR, Williams RS: Memristive switching mechanism for metal/oxide/metal nanodevices. Nat Nanotechnol 2008, 3:429.CrossRef 23. Park J, Biju KP, Jung S, Lee W, Lee J, Kim S, Park S, Shin J, Hwang H: Multibit operation of TiO x -based ReRAM by Schottky barrier height engineering. IEEE Electron Dev Lett 2011, 32:476.CrossRef 24. Lee SR, Char K, Kim DC, Jung R, Seo S, Li XS, Park GS, Yoo IK: Resistive memory switching in epitaxially grown NiO. Appl Phys Lett 2007, 91:202115.CrossRef 25. Ielmini D, Nardi F, Cagli C: Physical models of size-dependent nanofilament formation and rupture in NiO resistive switching memories. Nanotechnology 2011, 22:254022.CrossRef 26. Guan Exoribonuclease W, Long S, Jia R, Liu M: Nonvolatile resistive switching memory utilizing gold nanocrystals embedded in zirconium oxide. Appl Phys Lett 2007, 91:062111.CrossRef 27. Wang SY, Lee DY, Tseng TY, Lin CY: Effects of Ti top electrode thickness on the resistive switching behaviors of rf-sputtered ZrO 2 memory films. Appl Phys Lett 2009, 95:112904.CrossRef 28. Li Y, Long S, Lv H, Liu Q, Wang Y, Zhang S, Lian W, Wang M, Zhang K, Xie H, Liu S, Liu M: Improvement of resistive switching characteristics in ZrO 2 film by embedding a thin TiO x layer. Nanotechnology 2011, 22:254028.CrossRef 29.